
NTD5865N
1600
10
1400
1200
1000
C iss
V GS = 0 V
T J = 25 ° C
8
6
Q gs
Q T
Q gd
800
600
4
400
200
0
C rss
C oss
2
0
V DS = 48 V
I D = 38 A
T J = 25 ° C
0
10 20 30 40 50
60
0
5 10 15 20
25
1000
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
40
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? to ? Source vs. Total Charge
100
V DD = 48 V
I D = 38 A
V GS = 10 V
t d(off)
35
30
25
20
V GS = 0 V
T J = 25 ° C
10
t r
t d(on)
15
10
1
t f
5
0
1
10
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
100
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
V SD , SOURCE ? TO ? DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000
V GS = 10 V
SINGLE PULSE
100
T C = 25 ° C
10 ms
1 ms
10 m s
10
100 m s
1
R DS(on) LIMIT
THERMAL LIMIT
dc
0.1
0.1
PACKAGE LIMIT
1
10
100
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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